withlight

  • HOME
  • KOREAN
  • bullet Devices(LED/OLED)

    OPI-160  WAFER-LEVEL LED MEASUREMENT SYSTEM

    Easy to measure various items, User interface (Support on-demand SW design), integrated measurement of optical, electrical and thermal dependency required in wafer level, automation of measurement and convenient user environment, observation using high r


    • Easy to measure various items, User interface (Support on-demand SW design)
    • ㆍOptical Measurement
    •    Spectrum, Peak/Dominant wavelength(λp, λd), CIE Color Coordinate(Cx, Cy), Luminous Intensity(cd), Correlated Color Temperature(CCT(Tc)), Color Rendering Index(CRI(Ra)), CIE XYZ(), Radiant Flux(mW), Luminous Flux(lm), Spatial Intensity Distribution(IES, LDT)
    •  
    • ㆍElectrical Measurement
    •    Forward/ Reverse Current[lf, lr], Forward/Reverse Voltage[Vf, Vr], l-V-L Sweep
    •  
    • ㆍTemperature Dependence Measurement
    •    Temperature.VS.Electrical/optical Test
    •  
    • ㆍCurrent Spreading and Degradation Analysis
    •    Real time Image analysis of LED using CCD Camera and beam profiler software
    • Optimized for R&D
    • Integrated measurement of optical, electrical and thermal dependency required in wafer level.

    • Automation of measurement and convenient user environment.

    • Observation of Chip Current spreading and degradation using high resolution microscope and camera.

    • Function integration and verification by a number of reseachers.

    • Provide CIE measurement mode andKRISS standard value.

    • High precision measurement using Keithley 2612

    • Low noise and high precision / reproduction using TE Cooled 2048 pixel CCD sensor.

    • Display light distribution characteristics in 2D/3D graphs and data list by analyzing, summarizing and duplicating measured data.